Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
13.8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.295", 7.50mm Width)
Supplier Device Package
20-SO
Base Product Number
BUK9M