English
Spain
Rusia
Italy
ChinaSPS03N60C3AKMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPS03N60C3AKMA1
BESCHREIBUNG
MOSFET N-CH 650V 3.2A TO251-3-11
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 3.2A (Tc) 38W (Tc) Through Hole PG-TO251-3-11
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
SPS03N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-SPS03N60C3AKMA1
INFINFSPS03N60C3AKMA1
SP001130982
2156-SPS03N60C3AKMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPS03N60C3AKMA1
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 666
Einzelpreis: $0.45
Verpackung: Bulk
MinMultiplikator: 666
Verpackung: Bulk
MinMultiplikator: 666
Stellvertreter
-