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ChinaEPC2012
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
EPC2012
BESCHREIBUNG
GANFET N-CH 200V 3A DIE
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 3A (Ta) Surface Mount Die
HERSTELLER
EPC
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 5 V
Vgs (Max)
+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds
145 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Base Product Number
EPC20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
Andere Namen
917-1017-1
917-1017-6
-917-1017-1
917-1017-2
-917-1017-2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/EPC EPC2012
Dokumente und Medien
Datasheets
1(EPC2012)
Product Training Modules
1(Paralleling eGaN FETs)
Video File
1(Texas Instruments/Wurth/EPC GaN Solutions First Look Video)
Environmental Information
()
Featured Product
1(EPC Low Voltage eGaN® FETs)
PCN Obsolescence/ EOL
1(EPC20yy Family EOL 31/May/2017)
PCN Design/Specification
1(EPC20xx Material 10/Apr/2013)
PCN Assembly/Origin
1(EPC2yyy Family Process Change 14/Dec/2013)
PCN Other
1(Multiple Changes 24/Jun/2014)
HTML Datasheet
1(EPC2012)
Menge Preis
-
Stellvertreter
Teil Nr. : EPC2012C
Hersteller. : EPC
Verfügbare Menge. : 15,975
Einzelpreis. : $2.92000
Ersatztyp. : Direct
Verfügbare Menge. : 15,975
Einzelpreis. : $2.92000
Ersatztyp. : Direct