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ChinaFF200R12KT3EHOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF200R12KT3EHOSA1
BESCHREIBUNG
IGBT MODULE 1200V 1050W
DETAILIERTE BESCHREIBUNG
IGBT Module 2 Independent 1200 V 1050 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
C
Package
Tray
Product Status
Not For New Designs
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
1050 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF200R12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FF200R12KT3_E-ND
FF200R12KT3_E
SP000314729
2156-FF200R12KT3EHOSA1
INFINFFF200R12KT3EHOSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF200R12KT3EHOSA1
Dokumente und Medien
Datasheets
1(FF200R12KT3_E)
HTML Datasheet
1(FF200R12KT3_E)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $132.932
Verpackung: Tray
MinMultiplikator: 10
Verpackung: Tray
MinMultiplikator: 10
Stellvertreter
-