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ChinaBCP69-25E6327
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TEILNUMMER DES HERSTELLERS
BCP69-25E6327
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor 20 V 1 A 100MHz 3 W Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,731
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
20 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA, 1V
Power - Max
3 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
INFINFBCP69-25E6327
2156-BCP69-25E6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BCP69-25E6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1731
Einzelpreis: $0.17
Verpackung: Bulk
MinMultiplikator: 1731
Verpackung: Bulk
MinMultiplikator: 1731
Stellvertreter
-