English
Spain
Rusia
Italy
ChinaIRFSL31N20DTRR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFSL31N20DTRR
BESCHREIBUNG
MOSFET N-CH 200V 31A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole I2PAK
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2370 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFSL31
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFSL31N20DTRR
Dokumente und Medien
Datasheets
1(IRFB31N20D, IRFS(L)31N20D)
HTML Datasheet
1(IRFB31N20D, IRFS(L)31N20D)
Menge Preis
-
Stellvertreter
-