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ChinaRJK03E1DNS-00#J5
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK03E1DNS-00#J5
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 25A (Ta) 15W (Tc) Surface Mount 8-HWSON (3.3x3.3)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
275
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta)
Rds On (Max) @ Id, Vgs
6.9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
15W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNSRJK03E1DNS-00#J5
2156-RJK03E1DNS-00#J5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK03E1DNS-00#J5
Dokumente und Medien
Datasheets
1(RJK03E1DNS-00#J5)
Menge Preis
QUANTITÄT: 275
Einzelpreis: $1.09
Verpackung: Bulk
MinMultiplikator: 275
Verpackung: Bulk
MinMultiplikator: 275
Stellvertreter
-