Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXTK21N100
BESCHREIBUNG
MOSFET N-CH 1000V 21A TO264
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 21A (Tc) 500W (Tc) Through Hole TO-264 (IXTK)
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
IXYS
Series
MegaMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
250 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264 (IXTK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXTK21

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTK21N100

Dokumente und Medien

Datasheets
1(IXT(K,N)21N100)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXT(K,N)21N100)

Menge Preis

-

Stellvertreter

Teil Nr. : APT10050LVFRG
Hersteller. : Microchip Technology
Verfügbare Menge. : 7
Einzelpreis. : $25.41000
Ersatztyp. : Similar