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ChinaSCT3022KLHRC11
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SCT3022KLHRC11
BESCHREIBUNG
SICFET N-CH 1200V 95A TO247N
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
35 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
2879 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
427W
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3022
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT3022KLHRC11
Dokumente und Medien
Datasheets
1(SCT3022KLHRC11)
Other Related Documents
1(SCT PPAP Statement)
Product Training Modules
1(Industrial Motor Products: Part 1 - Power Devices/Gate Drivers)
Video File
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