Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SPW55N80C3FKSA1
BESCHREIBUNG
MOSFET N-CH 800V 54.9A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 54.9A (Tc) 500W (Tc) Through Hole PG-TO247-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ C3
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
54.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
288 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7520 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
SPW55N80

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP000849356
SPW55N80C3FKSA1-ND
448-SPW55N80C3FKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPW55N80C3FKSA1

Dokumente und Medien

Datasheets
1(SPW55N80C3)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPW55N80C3)
Simulation Models
1(CoolMOS™ Power MOSFET 800V C3 Spice Model)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $9.07722
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $9.89622
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $10.92
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $11.60233
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $14.33
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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