English
Spain
Rusia
Italy
ChinaIXFM67N10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFM67N10
BESCHREIBUNG
MOSFET N-CH 100V 67A TO204AE
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 67A (Tc) 300W (Tc) Through Hole TO-204AE
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-204AE
Package / Case
TO-204AE
Base Product Number
IXFM67
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFM67N10
Dokumente und Medien
Datasheets
1(IXF(H,M,)(67,75)N10)
HTML Datasheet
1(IXF(H,M,)(67,75)N10)
Menge Preis
-
Stellvertreter
Teil Nr. : PSMN013-100PS,127
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 3,262
Einzelpreis. : $2.42000
Ersatztyp. : Similar
Verfügbare Menge. : 3,262
Einzelpreis. : $2.42000
Ersatztyp. : Similar