English
Spain
Rusia
Italy
ChinaIXTX6N200P3HV
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTX6N200P3HV
BESCHREIBUNG
MOSFET N-CH 2000V 6A TO247PLUSHV
DETAILIERTE BESCHREIBUNG
N-Channel 2000 V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
HERSTELLER
IXYS
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Polar P3™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247PLUS-HV
Package / Case
TO-247-3 Variant
Base Product Number
IXTX6
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTX6N200P3HV
Dokumente und Medien
Datasheets
1(IXTX6N200P3HV)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXTX6N200P3HV)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $54.15167
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $58.31733
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $66.65
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-