English
Spain
Rusia
Italy
ChinaIRFH4210TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH4210TRPBF
BESCHREIBUNG
MOSFET N-CH 25V 45A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 45A (Ta) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.35mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4812 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFH4210TRPBFDKR
SP001572516
IRFH4210TRPBFCT
IRFH4210TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH4210TRPBF
Dokumente und Medien
Datasheets
1(IRFH4210PbF)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
()
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFH4210PbF)
Menge Preis
-
Stellvertreter
-