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ChinaIRF5852TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF5852TRPBF
BESCHREIBUNG
MOSFET 2N-CH 20V 2.7A 6TSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 2.7A 960mW Surface Mount 6-TSOP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.7A
Rds On (Max) @ Id, Vgs
90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 15V
Power - Max
960mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
IRF58
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
IRF5852TRPBF-ND
IRF5852TRPBFCT
SP001554076
IRF5852TRPBFDKR
IRF5852TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF5852TRPBF
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