English
Spain
Rusia
Italy
ChinaFQE10N20CTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQE10N20CTU
BESCHREIBUNG
MOSFET N-CH 200V 4A TO126-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,158
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
12.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-126-3
Package / Case
TO-225AA, TO-126-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFQE10N20CTU
2156-FQE10N20CTU-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQE10N20CTU
Dokumente und Medien
Datasheets
1(FQE10N20CTU)
Menge Preis
QUANTITÄT: 1158
Einzelpreis: $0.26
Verpackung: Tube
MinMultiplikator: 1158
Verpackung: Tube
MinMultiplikator: 1158
Stellvertreter
-