Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
RW1E015RPT2R
BESCHREIBUNG
MOSFET P-CH 30V 1.5A WEMT6
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
RW1E015RPT2R Models
STANDARDPAKET
8,000

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.2 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WEMT
Package / Case
6-SMD, Flat Leads
Base Product Number
RW1E015

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

RW1E015RPT2RCT
846-RW1E015RPT2RCT
846-RW1E015RPT2RTR
RW1E015RPT2RTR
846-RW1E015RPT2RDKR
RW1E015RPT2RDKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RW1E015RPT2R

Dokumente und Medien

Datasheets
1(RW1E015RPT2R)
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Sep/2021)
EDA Models
1(RW1E015RPT2R Models)

Menge Preis

-

Stellvertreter

Teil Nr. : RV4E031RPTCR1
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Teil Nr. : RW1E015RPT2R
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 4,783
Einzelpreis. : $0.43000
Ersatztyp. : Parametric Equivalent
Teil Nr. : SSM6J207FE,LF
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 3,995
Einzelpreis. : $0.43000
Ersatztyp. : Similar