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ChinaIPB136N08N3GATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPB136N08N3GATMA1
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 45A (Tc) 79W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
611
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
13.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIPB136N08N3GATMA1
2156-IPB136N08N3GATMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB136N08N3GATMA1
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 611
Einzelpreis: $0.49
Verpackung: Bulk
MinMultiplikator: 611
Verpackung: Bulk
MinMultiplikator: 611
Stellvertreter
-