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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SA673ABTZ-E
BESCHREIBUNG
0.5A, 50V, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 500 mA 400 mW Through Hole TO-92
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
740
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 3V
Power - Max
400 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
RENRNS2SA673ABTZ-E
2156-2SA673ABTZ-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SA673ABTZ-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 740
Einzelpreis: $0.41
Verpackung: Bulk
MinMultiplikator: 740
Verpackung: Bulk
MinMultiplikator: 740
Stellvertreter
-