Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQU9N25TU
BESCHREIBUNG
MOSFET N-CH 250V 7.4A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
70

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU9N25

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

ONSONSFQU9N25TU
FQU9N25TU-ND
2832-FQU9N25TU-488
2832-FQU9N25TU
FQU9N25TUOS
2156-FQU9N25TU-OS

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU9N25TU

Dokumente und Medien

Datasheets
1(FQU9N25TU Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chg 20/Dec/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)

Menge Preis

-

Stellvertreter

Teil Nr. : FQU10N20CTU
Hersteller. : onsemi
Verfügbare Menge. : 1,315
Einzelpreis. : $0.93000
Ersatztyp. : MFR Recommended
Teil Nr. : STU7NF25
Hersteller. : STMicroelectronics
Verfügbare Menge. : 3,000
Einzelpreis. : $1.54000
Ersatztyp. : Similar