Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRLR210ATM
BESCHREIBUNG
MOSFET N-CH 200V 2.7A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 2.7A (Tc) 2.5W (Ta), 21W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
533

Technische Daten

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.35A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 21W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IRLR210ATM-FSTR
FAIFSCIRLR210ATM

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRLR210ATM

Dokumente und Medien

Datasheets
1(IRLR210ATM)

Menge Preis

QUANTITÄT: 533
Einzelpreis: $0.56
Verpackung: Bulk
MinMultiplikator: 533

Stellvertreter

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