Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HN1A01F-Y(TE85L,F)
BESCHREIBUNG
TRANS 2PNP 50V 0.15A SM6
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
HN1A01F-Y(TE85L,F) Models
STANDARDPAKET
3,000

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Cut Tape (CT)
Product Status
Active
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
80MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN1A01

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

HN1A01F-Y(TE85LF)DKR
HN1A01F-Y(TE85LF)CT
HN1A01F-Y(TE85LF)TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN1A01F-Y(TE85L,F)

Dokumente und Medien

Datasheets
1(HN1A01F)
EDA Models
1(HN1A01F-Y(TE85L,F) Models)

Menge Preis

-

Stellvertreter

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