English
Spain
Rusia
Italy
ChinaFQP3N80C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP3N80C
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 3
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
401
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FQP3N80C
FAIFSCFQP3N80C
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP3N80C
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 401
Einzelpreis: $0.75
Verpackung: Bulk
MinMultiplikator: 401
Verpackung: Bulk
MinMultiplikator: 401
Stellvertreter
-