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ChinaBC856A-E6327
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TEILNUMMER DES HERSTELLERS
BC856A-E6327
BESCHREIBUNG
BIPOLAR GEN PURPOSE TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 65 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
18,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
65 V
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
330 mW
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23-3-1
Base Product Number
BC856
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BC856A-E6327
INFINFBC856A-E6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BC856A-E6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 18000
Einzelpreis: $0.02
Verpackung: Bulk
MinMultiplikator: 18000
Verpackung: Bulk
MinMultiplikator: 18000
Stellvertreter
-