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ChinaNTD2955-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD2955-1G
BESCHREIBUNG
MOSFET P-CH 60V 12A IPAK
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 12A (Ta) 55W (Tj) Through Hole
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
55W (Tj)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
-
Package / Case
-
Base Product Number
NTD2955
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTD2955-1G
NTD2955-1G-ND
NTD2955-1GOS
NTD29551G
2156-NTD2955-1G-OS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD2955-1G
Dokumente und Medien
Datasheets
1(NTD,NVD2955)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 7/Apr/2021)
PCN Assembly/Origin
1(TMOS7 Wafer Fab Expansion 04/Dec/2013)
HTML Datasheet
1(NTD,NVD2955)
Menge Preis
-
Stellvertreter
-