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ChinaRFD7N10LE
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFD7N10LE
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 7A (Tc) 47W (Tc) Through Hole TO-220-3
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
606
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
300mOhm @ 7A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFD7N10LE
2156-RFD7N10LE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFD7N10LE
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 606
Einzelpreis: $0.5
Verpackung: Bulk
MinMultiplikator: 606
Verpackung: Bulk
MinMultiplikator: 606
Stellvertreter
-