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ChinaSISS42DN-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SISS42DN-T1-GE3
BESCHREIBUNG
MOSFET N-CH 100V 11.8/40.5A PPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.8A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS42
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SISS42DN-T1-GE3CT
SISS42DN-T1-GE3TR
SISS42DN-GE3
SISS42DN-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SISS42DN-T1-GE3
Dokumente und Medien
Datasheets
1(SISS42DN)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SISS42DN)
Menge Preis
QUANTITÄT: 9000
Einzelpreis: $0.625
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.6464
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Stellvertreter
-