English
Spain
Rusia
Italy
ChinaIPD110N12N3GBUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD110N12N3GBUMA1
BESCHREIBUNG
MOSFET N-CH 120V 75A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD110N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD110N12N3 G
IPD110N12N3G
SP000674466
IPD110N12N3 GCT
IFEINFIPD110N12N3GBUMA1
IPD110N12N3 GTR-ND
IPD110N12N3 GCT-ND
IPD110N12N3GBUMA1CT
IPD110N12N3GBUMA1DKR
IPD110N12N3 GDKR
2156-IPD110N12N3GBUMA1
IPD110N12N3 G-ND
IPD110N12N3 GDKR-ND
2156-IPD110N12N3GBUMA1-ITTR-ND
IPD110N12N3 GTR
IPD110N12N3GBUMA1TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD110N12N3GBUMA1
Dokumente und Medien
Datasheets
1(IPx110N12N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx110N12N3 G)
Menge Preis
-
Stellvertreter
Teil Nr. : IPD110N12N3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,974
Einzelpreis. : $2.40000
Ersatztyp. : Direct
Verfügbare Menge. : 6,974
Einzelpreis. : $2.40000
Ersatztyp. : Direct