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ChinaFQP9N25C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP9N25C
BESCHREIBUNG
MOSFET N-CH 250V 8.8A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 8.8A (Tc) 74W (Tc) Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQP9N25C Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP9
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP9N25C
Dokumente und Medien
Datasheets
1(FQP9N25C, FQPF9N25C)
Environmental Information
()
HTML Datasheet
()
EDA Models
1(FQP9N25C Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Menge Preis
-
Stellvertreter
Teil Nr. : RCX100N25
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 430
Einzelpreis. : $2.16000
Ersatztyp. : Direct
Verfügbare Menge. : 430
Einzelpreis. : $2.16000
Ersatztyp. : Direct