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ChinaIRF6646TR1PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6646TR1PBF
BESCHREIBUNG
MOSFET N-CH 80V 12A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2060 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MN
Package / Case
DirectFET™ Isometric MN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6646TR1PBFCT
IRF6646TR1PBFTR
IRF6646TR1PBFDKR
SP001563466
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6646TR1PBF
Dokumente und Medien
Datasheets
1(IRF6646(TR)PbF)
Other Related Documents
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1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6646(TR)PbF)
Product Drawings
()
Menge Preis
-
Stellvertreter
Teil Nr. : IRF6646TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,589
Einzelpreis. : $2.85000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 6,589
Einzelpreis. : $2.85000
Ersatztyp. : Parametric Equivalent