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ChinaDDTC114ELP-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DDTC114ELP-7
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A 3DFN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 250 mW Surface Mount X1-DFN1006-3
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 70mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
250 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Supplier Device Package
X1-DFN1006-3
Base Product Number
DDTC114
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
DDTC114ELPDIDKR-ND
DDTC114ELPDITR
DDTC114ELP7
-DDTC114ELP-7DICT
DDTC114ELP-7DIDKR
DDTC114ELP-7DITR
-DDTC114ELP-7DITR
-DDTC114ELP-7DIDKR
DDTC114ELPDICT-ND
DDTC114ELPDITR-ND
DDTC114ELPDIDKR
DDTC114ELP-7DICT
DDTC114ELPDICT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Diodes Incorporated DDTC114ELP-7
Dokumente und Medien
Datasheets
1(DDTC114ELP)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Mult Dev A/T Chg 5/Apr/2021)
Product Drawings
()
Menge Preis
-
Stellvertreter
Teil Nr. : NSBC114EF3T5G
Hersteller. : onsemi
Verfügbare Menge. : 53,397
Einzelpreis. : $0.37000
Ersatztyp. : Direct
Verfügbare Menge. : 53,397
Einzelpreis. : $0.37000
Ersatztyp. : Direct