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ChinaIPT65R195G7XTMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPT65R195G7XTMA1
BESCHREIBUNG
MOSFET N-CH 650V 14A 8HSOF
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 14A (Tc) 97W (Tc) Surface Mount PG-HSOF-8-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IPT65R195G7XTMA1 Models
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
996 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
97W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN
Base Product Number
IPT65R195
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPT65R195G7XTMA1CT
IPT65R195G7XTMA1TR
IPT65R195G7XTMA1DKR
INFINFIPT65R195G7XTMA1
2156-IPT65R195G7XTMA1
IPT65R195G7XTMA1-ND
SP001456206
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPT65R195G7XTMA1
Dokumente und Medien
Datasheets
1(IPT65R195G7)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPT65R195G7)
EDA Models
1(IPT65R195G7XTMA1 Models)
Simulation Models
1(CoolMOS™ Power MOSFET 650V G7 Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IPT65R190CFD7XTMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.41586
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $1.41586
Ersatztyp. : MFR Recommended