English
Spain
Rusia
Italy
ChinaSIS612EDNT-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIS612EDNT-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 50A PPAK1212-8S
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2060 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SIS612
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIS612EDNT-T1-GE3-ND
SIS612EDNT-T1-GE3CT
SIS612EDNT-T1-GE3TR
SIS612EDNT-T1-GE3DKR
Q8619879
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS612EDNT-T1-GE3
Dokumente und Medien
Datasheets
1(SiS612EDNT Series)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Mult Devs Assembly Location 31/Jan/2023)
HTML Datasheet
1(SiS612EDNT Series)
Menge Preis
-
Stellvertreter
Teil Nr. : SISA26DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5,682
Einzelpreis. : $0.80000
Ersatztyp. : Similar
Verfügbare Menge. : 5,682
Einzelpreis. : $0.80000
Ersatztyp. : Similar