Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQB8N25TM
BESCHREIBUNG
MOSFET N-CH 250V 8A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 8A (Tc) 3.13W (Ta), 87W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468

Technische Daten

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 87W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FAIFSCFQB8N25TM
2156-FQB8N25TM-FSTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB8N25TM

Dokumente und Medien

Datasheets
1(FQB8N25TM)

Menge Preis

QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Bulk
MinMultiplikator: 468

Stellvertreter

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