English
Spain
Rusia
Italy
ChinaUPA2825T1S-E2-AT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UPA2825T1S-E2-AT
BESCHREIBUNG
MOSFET N-CH 30V 8HVSON
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 24A (Tc) 1.5W (Ta), 16.5W (Tc) Surface Mount 8-HWSON (3.3x3.3)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
UPA2825T1S-E2-AT Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta), 16.5W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation UPA2825T1S-E2-AT
Dokumente und Medien
Datasheets
1(UPA2825T1S)
PCN Obsolescence/ EOL
1(Mult Dev EOL 19/Jun/2020)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(UPA2825T1S-E2-AT Models)
Menge Preis
-
Stellvertreter
-