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ChinaTSM1NB60SCT A3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM1NB60SCT A3G
BESCHREIBUNG
MOSFET N-CH 600V 500MA TO92
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 500mA (Tc) 2.5W (Tc) Through Hole TO-92
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TSM1NB60SCT A3GTB
TSM1NB60SCT A3GCT-ND
TSM1NB60SCT A3GTB-ND
TSM1NB60SCTA3GTB
TSM1NB60SCTA3GCT
TSM1NB60SCT A3GCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM1NB60SCT A3G
Dokumente und Medien
Datasheets
1(TSM1NB60SCT)
Environmental Information
()
HTML Datasheet
1(TSM1NB60SCT)
Menge Preis
-
Stellvertreter
Teil Nr. : STQ2HNK60ZR-AP
Hersteller. : STMicroelectronics
Verfügbare Menge. : 9,835
Einzelpreis. : $0.94000
Ersatztyp. : Similar
Verfügbare Menge. : 9,835
Einzelpreis. : $0.94000
Ersatztyp. : Similar