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ChinaNTD4806N-35G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD4806N-35G
BESCHREIBUNG
MOSFET N-CH 30V 11.3A/79A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTD4806N-35G Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 11.5V
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2142 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta), 68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
NTD48
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTD4806N-35G
2156-NTD4806N-35G-ON
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4806N-35G
Dokumente und Medien
Datasheets
1(NTD4806N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 27/Jun/2014)
PCN Assembly/Origin
1(Qualification Multiple Devices 24/Sep/2013)
HTML Datasheet
1(NTD4806N)
EDA Models
1(NTD4806N-35G Models)
Menge Preis
-
Stellvertreter
-