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ChinaMRF586G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MRF586G
BESCHREIBUNG
RF TRANS NPN 17V 3GHZ TO39
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 17V 200mA 3GHz 1W Through Hole TO-39
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
17V
Frequency - Transition
3GHz
Noise Figure (dB Typ @ f)
-
Gain
13.5dB
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Current - Collector (Ic) (Max)
200mA
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
OBSOLETE
HTSUS
0000.00.0000
Andere Namen
150-MRF586G
MRF586G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation MRF586G
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 10/Aug/2017)
Menge Preis
-
Stellvertreter
-