Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTMS4N01R2G
BESCHREIBUNG
MOSFET N-CH 20V 3.3A 8SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 3.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMS4N01R2G Models
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
770mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS4N

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

NTMS4N01R2GOS
2156-NTMS4N01R2G-ONTR
ONSONSNTMS4N01R2G

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS4N01R2G

Dokumente und Medien

Datasheets
1(NTMS4N01R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
EDA Models
1(NTMS4N01R2G Models)

Menge Preis

QUANTITÄT: 25000
Einzelpreis: $0.22361
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 12500
Einzelpreis: $0.22725
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 5000
Einzelpreis: $0.24543
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 2500
Einzelpreis: $0.25906
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500

Stellvertreter

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