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ChinaCY7C1360S-200AXI
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TEILNUMMER DES HERSTELLERS
CY7C1360S-200AXI
BESCHREIBUNG
IC SRAM 9MBIT PARALLEL 100TQFP
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3 ns 100-TQFP (14x20)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
72
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
9Mbit
Memory Organization
256K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3 ns
Voltage - Supply
3.14V ~ 3.63V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
100-LQFP
Supplier Device Package
100-TQFP (14x20)
Base Product Number
CY7C1360
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
2832-CY7C1360S-200AXI
428-3167
428-3167-ND
-CY7C1360S-200AXI
CY7C1360S200AXI
448-CY7C1360S-200AXI
2156-CY7C1360S-200AXI-CY
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1360S-200AXI
Dokumente und Medien
Video File
1(Cypress’ IoT Memory: Power Snooze SRAM)
Featured Product
1(Cypress Memory Products)
PCN Obsolescence/ EOL
()
PCN Assembly/Origin
1(Qualification Test Site 13/Mar/2014)
PCN Packaging
()
Menge Preis
-
Stellvertreter
-