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ChinaIRF6613TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6613TRPBF
BESCHREIBUNG
IRF6613 - 12V-300V N-CHANNEL POW
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 23A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
258
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-IRF6613TRPBF
INFIRFIRF6613TRPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF6613TRPBF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 258
Einzelpreis: $1.16
Verpackung: Bulk
MinMultiplikator: 258
Verpackung: Bulk
MinMultiplikator: 258
Stellvertreter
-