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ChinaMTP2P50E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MTP2P50E
BESCHREIBUNG
MOSFET P-CH 500V 2A TO220AB
DETAILIERTE BESCHREIBUNG
P-Channel 500 V 2A (Tc) 75W (Tc) Through Hole TO-220
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
MTP2P50E Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1183 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
MTP2P
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi MTP2P50E
Dokumente und Medien
Datasheets
1(MTP2P50E)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 03/Jan/2008)
HTML Datasheet
1(MTP2P50E)
EDA Models
1(MTP2P50E Models)
Menge Preis
-
Stellvertreter
-