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ChinaAPTGT50DH120T3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTGT50DH120T3G
BESCHREIBUNG
IGBT MODULE 1200V 75A 277W SP3
DETAILIERTE BESCHREIBUNG
IGBT Module Trench Field Stop Asymmetrical Bridge 1200 V 75 A 277 W Chassis Mount SP3
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
Trench Field Stop
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
75 A
Power - Max
277 W
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector Cutoff (Max)
250 µA
Input Capacitance (Cies) @ Vce
3.6 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTGT50DH120T3G-ND
150-APTGT50DH120T3G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Microsemi Corporation APTGT50DH120T3G
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Nov/2017)
Menge Preis
-
Stellvertreter
-