Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPI120N06S402AKSA2
BESCHREIBUNG
MOSFET N-CH 60V 120A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IPI120N06S402AKSA2
SP001028778
INFINFIPI120N06S402AKSA2

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI120N06S402AKSA2

Dokumente und Medien

Datasheets
1(IPx120N06S4-02)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx120N06S4-02)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $2.1871
Verpackung: Tube
MinMultiplikator: 500

Stellvertreter

Teil Nr. : IPI80N06S407AKSA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 500
Einzelpreis. : $2.00000
Ersatztyp. : MFR Recommended
Teil Nr. : IPI041N12N3GAKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 494
Einzelpreis. : $6.11000
Ersatztyp. : Similar