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ChinaAPTMC120AM08CD3AG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTMC120AM08CD3AG
BESCHREIBUNG
MOSFET 2N-CH 1200V 250A D3
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 250A (Tc) 1100W Chassis Mount D3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id
2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
9500pF @ 1000V
Power - Max
1100W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
D-3 Module
Supplier Device Package
D3
Base Product Number
APTMC120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120AM08CD3AG
Dokumente und Medien
Datasheets
1(APTMC120AM08CD3AG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 18/Oct/20023)
HTML Datasheet
1(APTMC120AM08CD3AG)
Menge Preis
-
Stellvertreter
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