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ChinaMJD122-1G
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TEILNUMMER DES HERSTELLERS
MJD122-1G
BESCHREIBUNG
TRANS NPN DARL 100V 8A DPAK
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A, 4V
Power - Max
1.75 W
Frequency - Transition
4MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Base Product Number
MJD122
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJD122-1G
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 30/Jun/2022)
Menge Preis
-
Stellvertreter
Teil Nr. : MJD122G
Hersteller. : onsemi
Verfügbare Menge. : 1,748
Einzelpreis. : $1.05000
Ersatztyp. : Direct
Verfügbare Menge. : 1,748
Einzelpreis. : $1.05000
Ersatztyp. : Direct