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ChinaIPU06N03LZG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPU06N03LZG
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO251-3-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
649
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™2
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2783 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-21
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPU06N03LZG
INFINFIPU06N03LZG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU06N03LZG
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 649
Einzelpreis: $0.46
Verpackung: Bulk
MinMultiplikator: 649
Verpackung: Bulk
MinMultiplikator: 649
Stellvertreter
-