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ChinaSTU12N60M2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STU12N60M2
BESCHREIBUNG
MOSFET N-CH 600V 9A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
STU12N60M2 Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
538 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-16024-5
-497-16024-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STU12N60M2
Dokumente und Medien
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Assembly/Origin
1(Assembly Site 22/Nov/2022)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)
HTML Datasheet
1(STU12N60M2)
EDA Models
1(STU12N60M2 Models)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.73479
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
Teil Nr. : IPS80R600P7AKMA1
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 2,980
Einzelpreis. : $0.76000
Ersatztyp. : Similar
Verfügbare Menge. : 2,980
Einzelpreis. : $0.76000
Ersatztyp. : Similar