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ChinaIXTA1N200P3HV-TRL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTA1N200P3HV-TRL
BESCHREIBUNG
MOSFET N-CH 2000V 1A TO263HV
DETAILIERTE BESCHREIBUNG
N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263HV
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
646 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263HV
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXTA1
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
238-IXTA1N200P3HV-TRLDKR
238-IXTA1N200P3HVTRLTR
238-IXTA1N200P3HVTRLDKR
IXTA1N200P3HVTRL
238-IXTA1N200P3HV-TRLTR
238-IXTA1N200P3HVTRLTR-ND
238-IXTA1N200P3HVTRLCT
238-IXTA1N200P3HVTRLCT-ND
238-IXTA1N200P3HV-TRLCT
238-IXTA1N200P3HVTRLDKR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTA1N200P3HV-TRL
Dokumente und Medien
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
Menge Preis
-
Stellvertreter
Teil Nr. : IXTT1N250HV-TRL
Hersteller. : IXYS
Verfügbare Menge. : 0
Einzelpreis. : $35.12118
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $35.12118
Ersatztyp. : Similar