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ChinaAPTM120DA30CT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTM120DA30CT1G
BESCHREIBUNG
MOSFET N-CH 1200V 31A SP1
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 31A (Tc) 657W (Tc) Chassis Mount SP1
HERSTELLER
Microchip Technology
STANDARD LEADTIME
42 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
560 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
14560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
657W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP1
Package / Case
SP1
Base Product Number
APTM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APTM120DA30CT1G
Dokumente und Medien
Datasheets
1(APTM120DA30CT1G)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 08/Aug/2023)
PCN Packaging
1(Package change 11/Oct/2021)
HTML Datasheet
1(APTM120DA30CT1G)
Menge Preis
QUANTITÄT: 12
Einzelpreis: $86.81
Verpackung: Bulk
MinMultiplikator: 12
Verpackung: Bulk
MinMultiplikator: 12
Stellvertreter
-