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TEILNUMMER DES HERSTELLERS
ALD212914PAL
BESCHREIBUNG
MOSFET 2N-CH 10.6V 0.08A 8DIP
DETAILIERTE BESCHREIBUNG
Mosfet Array 10.6V 80mA 500mW Through Hole 8-PDIP
HERSTELLER
Advanced Linear Devices Inc.
STANDARD LEADTIME
8 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Advanced Linear Devices Inc.
Series
EPAD®, Zero Threshold™
Package
Tube
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Matched Pair
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
10.6V
Current - Continuous Drain (Id) @ 25°C
80mA
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
500mW
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Supplier Device Package
8-PDIP
Base Product Number
ALD212914
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Advanced Linear Devices Inc. ALD212914PAL
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 50
Einzelpreis: $6.8316
Verpackung: Tube
MinMultiplikator: 50
Verpackung: Tube
MinMultiplikator: 50
Stellvertreter
-